features 3 ka, 8/20 s surge capability low clamping voltage under surge bidirectional tvs excellent performance over temperature applications high power dc bus protection absolute maximum ratings (@ t a = 25 ? unless otherwise noted) model PTVS3-015C-TH high current tvs diode * rohs directive 2002/95/ec jan. 27, 2003 including annex and rohs recast 2011/65/eu june 8, 2011. **bourns considers a product to be ?halogen free? if (a) the bromine (br) content is 900 ppm or less; (b) the chlorine (cl) content is 900 ppm or less; and (c) the total bromine (br) and chlorine (cl) content is 1500 ppm or less. speci? cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their speci? c applications. general information the model PTVS3-015C-TH high current bidirectional tvs diode is designed for use in high power dc bus clamping applications. this device offers bidirectional port protection. the device is rohs* compliant and halogen free**. it also meets iec 61000-4-5 8/20 s current surge requirements. *rohs compliant electrical characteristics (@ t a = 25 ? unless otherwise noted) parameter test conditions min. typ. max. unit i d standby current v d = v wm 10 a v (br) breakdown voltage i br = 10 ma 16 17.5 19 v v c clamping voltage (1) per iec61000-4-5 (8/20 s current waveform) i pp = 3 ka 28 v v (br) temperature coef? cient 0.1 %/c c capacitance f = 10 khz, v d = 1 vrms 7.5 nf asia-paci c: tel: +886-2 2562-4117 ?fax: +886-2 2562-4116 emea: tel: +36 88 520 390 ?fax: +36 88 520 211 the americas: tel: +1-951 781-5500 ?fax: +1-951 781-5700 www.bourns.com (1) v c measured at the time which is coincident with the peak surge current. rating symbol value unit repetitive standoff voltage v wm 15 v peak current rating per 8/20 s iec 61000-4-5 i ppm 3k a operating junction temperature range t j -40 to +125 c storage temperature range t s -55 to +150 c lead temperature, soldering (10 s) 260 c
120 0 0 25 50 100 75 125 150 175 ambient temperature (c) percent of rated value 110 100 90 80 70 60 50 40 30 20 10 12 -12 -40 -20 0 20 40 60 80 100 120 140 junction temperature (c) v br change vs. temperature (%) 10 8 6 4 2 0 -2 -4 -6 -8 -10 normalized to 25 c model PTVS3-015C-TH high current tvs diode performance graphs v-i characteristic percentage v br change vs. junction temperature typical surge current derating this graph shows the typical device surge current derating versus ambient temperature when subjected to the 8/20 ? current waveform per the iec 61000-4-5 speci cation. this device is not intended for continuous operation at temperatures above 125 ?. speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their speci c applications.
11/15 product dimensions model PTVS3-015C-TH high current tvs diode typical part marking PTVS3-015C-TH .......................................................................3015 dimensions: mm (inches) epoxy encapsulation materials conform to ul 94v-0. silver plated lead nish conforms to the solderability requirements of jesd22-b102, pb free solder. package dimensions are shown below: how to order ptvs 3 - 015 c - t h series ptvs = power tvs high current diode peak current rating 3 = 3 ka repetitive standoff voltage 015 = 15 v suf x c = bidirectional device package t = through-hole temperature h = high temperature series dim. PTVS3-015C-TH a 24.15 ?0.72 (0.951 ?0.028) b 2.40 ?0.50 (0.094 ?0.020) c 1.75 ?1.25 (0.069 ?0.049) d 10.80 (0.425) max. e 1.25 ?0.05 (0.049 ?0.002) f 9.30 (0.366) max. g 4.00 (0.157) max. h 6.00 ?1.00 (0.236 ?0.039) speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their speci c applications. d c h g a f e b
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